Etching a substrate: processes – Nongaseous phase etching of substrate – Etching inorganic substrate
Reexamination Certificate
2011-03-01
2011-03-01
Vinh, Lan (Department: 1713)
Etching a substrate: processes
Nongaseous phase etching of substrate
Etching inorganic substrate
C216S083000, C134S001200, C257S779000
Reexamination Certificate
active
07897059
ABSTRACT:
A method is provided for the removal of tin or tin alloys from substrates such as the removal of residual tin solder from the molds used in the making of interconnect solder bumps on a wafer or other electronic device. The method is particularly useful for the well-known C4NP interconnect technology and uses an etchant composition comprising cupric ions and HCl. Cupric chloride and cupric sulfate are preferred. A preferred method regenerates cupric ions by bubbling air or oxygen through the etchant solution during the cleaning process.
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Indyk Richard F.
Semkow Krystyna W.
DeLio & Peterson LLC
International Business Machines - Corporation
Nowak Kelly M.
Petrokaitis Joseph
Vinh Lan
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