X-ray or gamma ray systems or devices – Specific application – Diffraction – reflection – or scattering analysis
Patent
1994-08-05
1996-01-16
Porta, David P.
X-ray or gamma ray systems or devices
Specific application
Diffraction, reflection, or scattering analysis
378145, G01T 132
Patent
active
054854997
ABSTRACT:
X-ray dispersive and reflective structures utilizing special materials which exhibit improved performance in the specific ranges of interest. The structures are formed of alternating thin layers of uranium, uranium compound or uranium alloy and another spacer material consisting of elements or compounds with low absorptance chosen to match the wavelength of interest. These low index of refraction elements or compounds are those best suited for water window microscopy and nitrogen analysis, or are similar elements or compounds best suited for carbon analysis, boron analysis, and x-ray lithography. The structures are constructed using standard thin layer deposition techniques such as evaporation, sputtering, and CVD, or by novel methods which allow thinner and smoother layers to be deposited.
REFERENCES:
patent: 5216539 (1993-06-01), Boher et al.
patent: 5349192 (1994-09-01), Mackay
Allred David D.
Pew Hans K.
Moxtek, Inc.
Porta David P.
Wong Don
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