Coating apparatus – Gas or vapor deposition – Multizone chamber
Reexamination Certificate
1999-08-27
2001-04-10
Lund, Jeffrie R. (Department: 1763)
Coating apparatus
Gas or vapor deposition
Multizone chamber
C118S715000, C118S7230VE, C204S298250
Reexamination Certificate
active
06214120
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to an apparatus and method for processing wafers and optical coating, and more particularly, to a high throughput multi-vacuum chamber system for processing wafers and method of processing wafers using the same. Although the present invention is suitable for a wide scope of applications, it is particularly suitable for high wafer throughput, and reduced footprint, thereby providing a low cost of ownership.
2. Description of the Related Art
A wafer process, such as thin film deposition or etching, is generally carried out in a vacuum system. The vacuum system for the wafer process typically consists of vacuum chambers, load lock chambers (or loading door/flange), vacuum pumps, deposition sources, power supplies for the deposition sources, and process control gauges.
A conventional single vacuum chamber system is shown in
FIGS. 1A
to
1
C. A conventional box coater type system shown in
FIG. 1A
includes a chamber
1
, a loading door
2
, a pump
3
, a valve
4
connecting the chamber
1
and the pump
3
, and a deposition source and power supply
5
attached to the chamber
1
.
FIG.1B
shows another conventional system having a chamber
6
with a openable flange
7
for loading wafers. Similar to the box coater system shown in
FIG. 1A
, the system has a pump
8
and the chamber
6
connected by a valve
9
, and a deposition/power source
10
. Another type of conventional vacuum system is illustrated in FIG.
1
C. This type of system has a load lock chamber
11
attached to a main chamber
12
. Wafers (not shown) are transferred to the main chamber
12
through the load lock chamber
11
using a transport arm
13
(or robotic arm). A pump
14
to maintain the system under vacuum condition is connected to the main chamber
12
through a gate valve
15
. A deposition/power source
16
is also provided at the bottom of the main chamber
12
.
In all of the conventional vacuum systems, however, the wafer process is not able to be performed continuously without breaking the vacuum condition of the chamber when a wafer is loaded or unloaded into the system. As a result, the whole vacuum system including the vacuum pumps is not effectively utilized throughout the process.
Recently, a dual chamber vacuum system for depositing dielectric thin films by plasma-enhanced chemical vapor deposition (PECVD) was discussed in
Vacuum & Thin Film
, November/December 1998, pages 40 to 43. As shown in
FIG. 2
, the dual chamber compartment shares a common gas supply
21
, a pressure control
22
, and one vacuum pump
23
. Additionally, RF generators
24
, a cathode
25
, and an anode
26
are provided to generate a plasma in the vacuum system. By using this structure, a small footprint can be configured to process wafers. Also, throughput can be significantly greater than that of the conventional single chamber system.
Nonetheless, there are some problems in the dual chamber vacuum system shown in FIG.
2
. For example, although the system shares a common gas supply, a pressure control, and a vacuum pump, it still needs additional deposition sources (i.e. two RF generators). Further, since wafers in the system are processed simultaneously, they cannot be separately prepared if desired. Therefore, the conventional dual chamber vacuum system still has is some drawbacks such as a higher cost of the system and a lesser degree of flexibility in processing.
SUMMARY OF THE INVENTION
Accordingly, the present invention is directed to a high throughput multi-vacuum chamber system for processing wafers and method of processing wafers using the same that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
Another object of the present invention is to provide a high wafer throughput and reduced footprint, thereby providing a low cost of ownership and reducing labor.
Additional objects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objects and advantages of the invention will be realized and attained by means of the elements and combinations particularly pointed out in the appended claims.
To achieve the objects and in accordance with the purpose of the invention, as embodied and broadly described herein, an apparatus for processing wafers includes first and second processing chambers isolated from each other, an isolation chamber coupled to each processing chamber, a single first type vacuum pump alternatively pumping down the first and second processing chambers through the isolation chamber, wherein the first type vacuum pump can pump down the first processing chamber when a wafer is loaded or unloaded in the second processing chamber, and the first type vacuum pump can pump down the second processing chamber when a wafer is loaded or unloaded In the first processing chamber, a wafer processing source chamber having a wafer processing source, the wafer processing source chamber being coupled to the first and second processing chambers and the isolation chamber, and a plurality of second type vacuum pumps coupled to the first and second processing chambers and the wafer processing source chamber.
In another aspect of the present invention, an apparatus for processing wafers includes first and second processing chambers isolated from each other, an isolation chamber coupled to each processing chamber, a single high vacuum pump alternatively pumping down the first and second processing chambers through the isolation chamber, wherein the high vacuum pump is capable of pumping down the first processing chamber when a wafer is loaded or unloaded in the second processing chamber, and the high vacuum pump is capable of pumping down the second processing chamber when a wafer is loaded or unloaded in the first processing chamber, a wafer processing source chamber having a wafer processing source, the wafer processing source chamber coupled to the first and second processing chambers and the isolation chamber, a plurality of roughing pumps coupled to the first and second processing chambers and the wafer processing source chamber, and a power supply connected to the wafer processing source.
In a further aspect of the present invention, a method of processing wafers includes loading at least one wafer into a first processing chamber, pumping down the first processing chamber and a wafer process source chamber by a high vacuum pump, simultaneously processing at least one wafer in the first processing chamber and loading at least one wafer into a second processing chamber, pumping down the second processing chamber by a roughing pump, increasing the vacuum condition in the second processing chamber without pumping down by any vacuum pumps, unloading at least one wafer from the first processing chamber, and pumping down the second processing chamber and the wafer processing source chamber by the high vacuum pump.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only are not restrictive of the invention, as claimed.
REFERENCES:
patent: 4636401 (1987-01-01), Yamazaki et al.
patent: 4785962 (1988-11-01), Toshima
patent: 5043299 (1991-08-01), Chang et al.
patent: 5851365 (1998-12-01), Scobey
patent: 5855681 (1999-01-01), Maydan et al.
Innovac Corporation
Lund Jeffrie R.
MacArthur Sylvia R.
Morgan & Lewis & Bockius, LLP
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