High threshold metal oxide silicon read-only-memory transistors

Details High threshold metal oxide silicon read-only-memory transistors High threshold metal oxide silicon read-only-memory transistors

1994-10-07

1996-03-12

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257391, 257408, 257344, 257900, H01L 2976

Patent

active

054988969

ABSTRACT:
A method of forming ROM transistor memory cell including not forming lightly doped regions in the semiconductor substrate for some of the memory cells so as to form one type of memory cell and forming the lightly doped regions in another type of memory cell.

REFERENCES:
patent: 4406049 (1983-09-01), Tam et al.
patent: 4536944 (1985-08-01), Bracco et al.
patent: 4599118 (1986-07-01), Han et al.
patent: 4649629 (1987-03-01), Miller et al.
patent: 5081052 (1992-01-01), Kobayashi et al.
patent: 5200802 (1993-04-01), Miller

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