Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Patent
1995-01-10
1996-09-03
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
257712, 257707, H01L 2310, H01L 2334
Patent
active
055526357
ABSTRACT:
Disclosed herein is a high thermal emissive semiconductor device package which comprises a substrate having a plurality of external connection leads, a plurality of connection lands and wires between the leads and the lands; at least one semiconductor chips mounted on the substrate; bonding wires electrically connecting bonding pads of the chip and the connection lands of the substrate; a heat spreader with high thermal conductivity, which is attached to the upper surface of the bonding pads of the chip by insulating adhesives with good thermal conductivity; and a metal cap which is in contact with the upper surface of the heat spreader via thermal compounds and encapsulates the whole components by being sealed to the substrate.
The high thermal emissive semiconductor device packages have advantageous that they efficiently emit heat generated during the operation of components and that they may be applied to various semiconductor devices which can be produced at low costs.
REFERENCES:
patent: 5216278 (1993-06-01), Lin et al.
patent: 5287001 (1994-02-01), Buchmann et al.
Doane et al., "Multichip Module Technologies and Alternatives", Van Nostrand Reinhold, p. 475.
"Immersion Cooled Chips", Electronic Packaging and Production, Jun. 1993, p. 86-R.
"Thermal Elastomer Aids Heat Transfer", Electronics Packaging and Production, Oct. 1993, p. 12.
Ahn Seung H.
Kim Gu S.
Kim Jong G.
Park Jae M.
Clark S. V.
Crane Sara W.
Samsung Electronics Co,. Ltd.
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