Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2005-05-31
2005-05-31
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S403000, C438S404000, C438S219000, C438S295000, C438S355000
Reexamination Certificate
active
06900108
ABSTRACT:
Semiconductor devices useful in high temperature sensing applications include a silicon carbide substrate, a silicon dioxide layer, and an outer layer of crystalline doped silicon carbide. The device is a 3C—SiC/SiO2/SiC structure. This structure can be employed to fabricate high temperature devices such as piezoresistive sensors, minority carrier devices and so on. The crystalline doped silicon carbide is dielectrically isolated from the substrate. The devices are formed by processes that include bonding a pattern wafer to a substrate wafer, selective oxidation and removal of undoped silicon, and conversion of doped silicon to crystalline silicon carbide. The level of doping and the crystalline structure of the silicon carbide can be selected according to desired properties for particular applications.
REFERENCES:
patent: 4983538 (1991-01-01), Gotou
patent: 5165283 (1992-11-01), Kurtz et al.
patent: 5286671 (1994-02-01), Kurtz et al.
patent: 5759908 (1998-06-01), Steckl et al.
patent: 6034001 (2000-03-01), Shor et al.
patent: 6058782 (2000-05-01), Kurtz et al.
“Structural Characterization of Nanometer SiC Films Grown on Si”, Li, Steckl et al., Applied Physics Letters 62 (24), Jun. 1993, pp. 3135 through 3137.
“Epitaxial Growth of 3C-SiC Films on 4 inch Diameter Silicon Wafers by Atmospheric Pressure Chemical Vapor Deposition”, Zorman et al., Journal of Applied Physics 78 (8), Oct. 1995, pp. 5136-5138.
Kurtz Anthony D.
Ned Alexander A.
Fourson George
Kulite Semiconductor Products Inc.
Maldonado Julio J.
Plevy Howard & Darcy PC
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