Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-01-04
2011-01-04
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S453000, C438S523000, C438S533000
Reexamination Certificate
active
07863083
ABSTRACT:
A method for fabricating a CMOS gate electrode by using Re, Rh, Pt, Ir or Ru metal and a CMOS structure that contains such gate electrodes are described. The work functions of these metals make them compatible with current pFET requirements. For instance, the metal can withstand the high hydrogen pressures necessary to produce properly passivated interfaces without undergoing chemical changes. The thermal stability of the metal on dielectric layers such as SiO2, Al2O3and other suitable dielectric materials makes it compatible with post-processing temperatures up to 1000° C. A low temperature/low pressure CVD technique with Re2(CO)10as the source material is used when Re is to be deposited.
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Amos Ricky
Buchanan Douglas A.
Cabral, Jr. Cyril
Callegari Alessandro C.
Guha Supratik
Alexanian Vazken
International Business Machines - Corporation
Kusumakar Karen M
Nguyen Ha Tran T
Scully , Scott, Murphy & Presser, P.C.
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