High temperature, pressure and displacement microsensor

Details High temperature, pressure and displacement microsensor High temperature, pressure and displacement microsensor

1996-02-01

1997-06-10

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257419, 257420, 73722, 73728, H01L 2982

Patent

active

056379056

ABSTRACT:
A high-temperature, integrated, pressure sensor includes a single crystal semiconductor substrate that is provided with a recess in a first surface thereof, the recess bounded by a rim. A first coil structure is positioned within the recess and a pressure diaphragm, comprising a single-crystal semiconductor wafer is bounded about its periphery to the rim of the semiconductor substrate. The bonding is created by a glass interlayer between the pressure diaphragm and the semiconductor substrate. A second coil structure is positioned on the underside of the pressure diaphragm and is separated from the first coil structure. Electrical circuitry is connected to both coil structures and provides an output indicative of changes in inductive coupling between the coils.

REFERENCES:
patent: 4287501 (1981-09-01), Tominaga et al.
patent: 4586382 (1986-05-01), Sinha
patent: 4984046 (1991-01-01), Graeger et al.
patent: 5355714 (1994-10-01), Suzuki et al.
patent: 5481919 (1996-01-01), Brandt, Jr.
Sensors and Actuators, A21-A23 (1990), K. Peterson et al., "Ultra-Stable, High-temperature Pressure Sensors Using Silicon Fusion Bonding" (pp. 96-101).
Institute of Physics Publishing, Sensors Series (1993), K.T.V. Grattan et al.--"Sensors VI, Technology, Systems and Applications" (pp. 134-140).

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