High temperature phosphorous oxide diffusion source

Details High temperature phosphorous oxide diffusion source High temperature phosphorous oxide diffusion source

1995-10-19

1997-05-13

Dang, Trung

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

423263, 438567, H01L 21223

Patent

active

056292341

ABSTRACT:
The present invention relates to a solid high temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 3 and R is La, Y, Ce, Nd, Eu, Pr, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and to the doped silicon wafer.

REFERENCES:
patent: 4033790 (1977-07-01), Gunjigake
patent: 4846902 (1989-07-01), Pickrell
patent: 4891331 (1990-01-01), Rapp
Beercher, Bull. Soc. Fr. Mineral. Cristallogr. (1970) vol. 93 pp. 505-508 (with translation).
Durif, "Les Ultraphosphates", Bull. Soc. Fr. Mineral. Cristallogr. (1971) vol. 94 pp. 314-318.
Agrawal, "Systems Y2O.sub.3 -P2O.sub.5 and Gd2O.sub.3 -P2O.sub.5 ", J. Electrochem. Soc. (Jul. 1980) pp. 1550-1554.
Szczygiek, Journal of Solid State Chemistry, vol. 82 pp. 181-185 (1989).
Durrant, Introduction to Advanced Inorganic Chemistry John Wiley & Sons, NY (1970) pp. 1197-1202.

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