High temperature local oxidation of silicon for fine line patter

Details High temperature local oxidation of silicon for fine line patter High temperature local oxidation of silicon for fine line patter

1995-06-07

1998-04-14

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438765, H01L 2176

Patent

active

057390630

ABSTRACT:
Field oxide regions are formed in a dry oxygen environment containing controlled amounts of HCl at elevated temperatures to reduce edge defects of narrow source/drain regions.

REFERENCES:
patent: 4551910 (1985-11-01), Patterson
patent: 5151381 (1992-09-01), Liu et al.
Wolf, S., et al., Silicon Processing for the VLSI Era: vol. 1, Process Technology, Lattice Press, 1986, pp. 215-216.
Ghandhi, S., VLSI Fabrication Principles, 1983, Wiley Interscience Paslication, pp. 388-391.
Subrahmanyan, R., et al, "The Influence of HCI . . . in Silicon", J. Appl. Phys., 61(10), 15 May 1987, pp. 4804-4807.

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