Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2011-01-25
2011-01-25
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S473000, C438S604000
Reexamination Certificate
active
07875537
ABSTRACT:
A method is disclosed for forming a high electron mobility transistor. The method includes the steps of implanting a Group III nitride layer at a defined position with ions that when implanted produce an improved ohmic contact between the layer and contact metals, with the implantation being carried out at a temperature higher than room temperature and hot enough to reduce the amount of damage done to the Group III nitride layer, but below a temperature at which surface problems causing leakage at the gate or epitaxial layer dissociation would occur. An ohmic contact selected from the group consisting of titanium, aluminum, nickel and alloys thereof is added to the implanted defined position on the Group III nitride layer.
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Sheppard Scott T.
Suvorov Alexander
Cree Inc.
Taylor Earl N
Vu David
Withrow & Terranova, P.L.L.C.
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