High temperature interconnects for high temperature transducers

Details High temperature interconnects for high temperature transducers High temperature interconnects for high temperature transducers

2007-12-11

2007-12-11

Rose, Kiesha (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257S414000, C257S467000

Reexamination Certificate

active

11039587

ABSTRACT:
A silicon wafer is fabricated utilizing two or more semiconductor wafers. The wafers are processed using conventional wafer processing techniques and the wafer contains a plurality of output terminals which essentially are platinum titanium metallization or high temperature contacts. A glass cover member is provided which has a plurality of through holes. Each through hole is associated with a contact on the semiconductor wafer. A high temperature lead is directed through the through hole or aperture in the glass cover and is bonded directly to the appropriate contact. The lead is of a sufficient length to extend into a second non through aperture in the contact glass. The non through aperture is located on the side of the contact glass not in contact with the silicon sensor. The non through aperture is then filled with a high temperature conductive glass frit. A plurality of slots are provided. Each slot is associated with a through and a non through aperture to accommodate the wire as directed from the through aperture through the slot and into the non through aperture. The slots provide means of retaining or securing the wire as it passes from the through aperture to the non through aperture. The non through apertures as indicated are filled with a high temperature conductive glass frit which glass frit accommodates suitable pins.

REFERENCES:
patent: 5955771 (1999-09-01), Kurtz et al.
patent: 5973590 (1999-10-01), Kurtz et al.
patent: 6058782 (2000-05-01), Kurtz et al.
patent: 6221989 (2001-04-01), Furihata et al.
patent: 6891711 (2005-05-01), Kurtz

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