High-temperature electrostatic transducers and fabrication...

Details High-temperature electrostatic transducers and fabrication... High-temperature electrostatic transducers and fabrication...

2008-10-17

2010-11-30

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257SE29324, C257SE21598, C438S052000

Reexamination Certificate

active

07843022

ABSTRACT:
A high temperature micromachined ultrasonic transducer (HTCMUT) is provided. The HTCMUT includes a silicon on insulator (SOI) substrate having a doped first silicon layer, a doped second silicon layer, and a first insulating layer disposed between the first and second silicon layers. A cavity is disposed in the first silicon layer, where a cross section of the cavity includes a horizontal cavity portion on top of vertical cavity portions disposed at each end of the horizontal cavity portion, and the vertical cavity portion spans from the first insulating layer through the first silicon layer, such that a portion of the first silicon layer is isolated by the first insulating layer and the cavity. A membrane layer is disposed on the first silicon layer top surface, and spans across the cavity. A bottom electrode is disposed on the bottom of the second silicon layer.

REFERENCES:
patent: 6958255 (2005-10-01), Khuri-Yakub et al.

Affiliated with

Also associated with

Rating

High-temperature electrostatic transducers and fabrication... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-temperature electrostatic transducers and fabrication..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-temperature electrostatic transducers and fabrication... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4223276