High stability static memory device having metal-oxide semicondu

Details High stability static memory device having metal-oxide semicondu High stability static memory device having metal-oxide semicondu

1992-09-11

1994-02-08

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257365, 257380, 257391, 257392, 257401, 257408, 257904, H01L 2702, H01L 2710, H01L 2715

Patent

active

052850960

ABSTRACT:
A static memory device has memory cells each having a pair of driver MOSFETs, two load resistors each connected between a power source and a drain of each of the driver MOSFETs, two access MOSFETs each of which is connected between the drain of each of the driver MOSFETs and each of bit lines and gates of which are connected to a word line. In the memory cell, the thickness of a gate oxide film of the access MOSFET is made thicker than that of the gate oxide film of the driver MOSFET. The operation stability of the memory cell is enhanced, without the need of increasing a chip size, by increasing a ratio between the driver MOSFETs and the access MOSFETs of the memory cell (the ratio of current supplying capabilities of the two transistors) without making a gate size large or without making it so small as to cause process variations.

REFERENCES:
patent: 4866002 (1989-09-01), Shizukuishi et al.
patent: 4890144 (1989-12-01), Teng et al.
patent: 5122846 (1992-06-01), Haken
"Static-Noise Margin Analysis of MOS SRAM Cells", by E. Seevinck, IEEE Journal of Solid State Circuits, vol. SC-22, No. 5, Oct. 1987, pp. 748-754.

Affiliated with

Also associated with

Rating

High stability static memory device having metal-oxide semicondu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High stability static memory device having metal-oxide semicondu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High stability static memory device having metal-oxide semicondu will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-700123