High speed trench DMOS

Details High speed trench DMOS High speed trench DMOS

2005-02-01

2005-02-01

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S330000, C438S270000

Reexamination Certificate

active

06849899

ABSTRACT:
A method for making trench DMOS is provided that utilizes polycide and refractory techniques to make trench DMOS which exhibit low gate resistance, low gate capacitance, reduced distributed RC gate propagation delay, and improved switching speeds for high frequency applications.

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Matsumoto, S. et al., A 70-V, 90-mΔ.mm2, High-Speed Double-Layer Gate UMOSFET Realized by Selective CVD Tungsten, Proceedings of the 6th International Symposium on Power Semiconductor Deives & IC's, Switzerland, May 31-Jun. 2, 1994, pp. 365-369.

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