High-speed static RAM

Details High-speed static RAM High-speed static RAM

1998-06-24

1999-11-16

Phan, Trong

Static information storage and retrieval

Systems using particular element

Flip-flop

365156, G11C 1100

Patent

active

059869240

ABSTRACT:
To provide a SRAM wherein high-speed and low-voltage operation can be achieved with a small and simple circuit configuration, in a memory cell of the SRAM comprising a pair of MOS driver transistors (23 and 24) and a pair of MOS access transistors (21 and 22), well potential of the MOS driver transistors (23 and 24) and the MOS access transistors (21 and 22) is controlled to be the same with potential of gate electrodes of the MOS access transistors (21 and 22) connected to a word line (WL0) for selecting said each of said memory cells.

REFERENCES:
patent: 4805148 (1989-02-01), Diehl-Nagle et al.
patent: 5523966 (1996-06-01), Idel et al.
patent: 5559892 (1996-09-01), Boor
patent: 5600588 (1997-02-01), Kawashima
patent: 5621693 (1997-04-01), Nakase
patent: 5706226 (1998-01-01), Chan et al.
patent: 5726562 (1998-03-01), Mizuno

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