High speed, static digital multiplexer

Electronic digital logic circuitry – Function of and – or – nand – nor – or not – Field-effect transistor

Reexamination Certificate

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C326S113000, C327S410000

Reexamination Certificate

active

06819141

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Technical Field
The present invention relates in general to digital circuits and in particular to a digital multiplexer. Still more particularly, the present invention relates to an improved design of a static digital multiplexer.
2. Description of the Related Art
A multiplexer (MUX) is an electronic device, which is capable of accepting more than one input signal simultaneously and chooses one (or more) of the input signals as an output signal in response to the state of one or more select input. Conventional multiplexers are typically designed utilizing a combination of transistors from within the family of metal-oxide-semiconductor field-effect transistor (MOSFETs). Traditional static complementary MOS (CMOS) multiplexers have larger overall surface area and are typically relatively slow. Currently, the more common MUX designs being utilized include static pass gate and transmission gate multiplexers. Both of these MUXes have found extensive use in microprocessor designs due to their high density and relatively low power performance. They also provide higher speed than traditional static complementary MOS (CMOS) multiplexers.
A three input, static pass gate multiplexer (PG-MUX) is depicted in FIG.
1
. PG-MUX
100
is usually built with N-type MOSFETs (NFETS)
101
because they have larger current driving capability than PFETs. Each input
109
of PG-MUX
100
is coupled to an inline inverter
111
, whose output is coupled to the drain of NFET
101
. A corresponding select signal
113
is connected to the gate of NFET
101
. The source of each NFET
101
is coupled to a muxnode
108
. Muxnode
108
is coupled to the drain of PFET
107
and to a second inverter
103
in turn coupled to output
115
. NFET
101
in PG-MUX
100
is a passive device; therefore, second inverter
103
is interposed between muxnode
108
and output
115
to yield sufficient current driving capability for output
115
.
In operation, the total delay of PG-MUX
100
is the sum of the delays of an input inverter
111
, a pass transistor (NFET
101
), and second inverter
103
. As is well known in the art, PG-MUX
100
is effective for passing a high input signal (i.e., a “1”).
One major big drawback with a PG-MUX is that it cannot effectively and/or quickly pass a logic low input signal (i.e., a “0”). This is because the voltage at muxnode
108
is not the full power supply voltage, V
DD
, of PFET
107
but rather is reduced by the value of the threshold voltage (V
t
) of PFET
107
(i.e., V
DD
−V
t
). In order to pass a good logic “1” (i.e., inverted input “0”), a “half-latch”
105
is utilized to pull-up PFET
107
to V
DD
. A typical half-latch
105
is implemented with PFET
107
whose gate is coupled in a feedback loop around second inverter
103
. Utilization of half-latch
105
when passing a “1” followed by a “0” results in a significant switching penalty. By enabling a faster pass of a “1” with half-latch
105
a subsequent pass of a “0” is slowed down. This switching delay between “1” and “0” occurs because half-latch
105
continues to charge muxnode
108
until muxnode
108
is discharged to “0” and produces a “1” via inverter
103
to disable PFET
107
. Therefore, a significant time is taken for the next input signal “1” to pass through as the half-latch
105
attempts to keep up the power at muxnode
108
after passing a logic “1” (i.e., inverted input signal
0
), while the input is attempting to keep the power down. This “fight” causes additional current to be drawn, which leads to extra power dissipation and slower overall speeds.
A conventional three-input transmission gate multiplexer (TG-MUX) is illustrated in FIG.
2
. Each input
209
of TG-MUX
200
is connected to inline inverter
211
, whose output is coupled to the drain of NFET
201
and source of PFET
207
. NFET
201
and PFET
207
are connected in parallel, source to drain. A corresponding select signal
213
is connected to the gate of NFET
201
, while the complement of select signal
206
is connected to the gate of PFET
207
. Complement of select signal
206
is generated by passing select signal
213
through second inverter
204
. The outputs of the parallel branches of NFET
201
and PFET
207
are coupled together at muxnode
208
. Muxnode
208
is connected to third inverter
203
, which inverts the signal to produce output
115
. Unlike a PG-MUX, TG-MUX
200
does not utilize a half-latch to pass a good “0” or good “1”. However, TG-MUX
200
is not necessarily faster than a PG-MUX, because TG-MUX uses additional parallel PFET
207
, which is weaker than NFETs and adds extra delays due to a larger capacitance. In the design of TG-MUX
200
, select signal
213
and its complement signal
206
have to be applied, and thus extra circuitry (i.e., second inverter
204
) is required to generate complement signals
206
. Utilizing extra circuitry
204
prevents select signal
213
and complement signal
206
from arriving at the same time due to the delays associated with second inverter
204
. The “under-lapping” of select signal
213
and complement signal
206
leads to longer “open” time of the gates of the transistors
201
and
207
respectively, which leads to cross DC currents through the input data paths. Such currents in turn result in speed degradation and extra power dissipation.
Improving the operation of the conventional designs of multiplexers has proven to be difficult. In particular, no major improvement in speed and low power applications has occurred recently.
The present invention recognizes that it would be desirable and beneficial to have a multiplexer circuit with improved speed performance over the traditional MUX circuits. It would further be desirable to provide a multiplexer circuit which operates with low power dissipation. A MUX design which incorporates both improved speed and power dissipation, while overcoming the afore-mentioned problems associated with traditional MUX designs would be a welcomed improvement. These and other benefits are provided by the invention described herein.
SUMMARY OF THE INVENTION
A high speed static multiplexer is disclosed comprising: (1) a plurality of data inputs and at least one select input; (2) an output; (3) a high voltage rail and a low voltage rail; (4) a pull-up circuit coupled between the output and the high voltage rail and further coupled to receive the data inputs and the select input so that the pull-up circuit generates a first logic state at the output in response to the selected data input having that first logic state; (5) and a pull-down circuit coupled between the output and the low voltage rail and further coupled to receive the data inputs and the select input, so that the pull-down circuit generates a second logic state at the output in response to the selected data input having that second logic state.
In a preferred embodiment, three N-type transistors are utilized in each of at least two sets of transistors corresponding to each data input. The data input is coupled to an inverter, which inverts the input data. The output of the inverter is coupled to the drain of the first transistor and to the gate of the third transistor. The pull-down circuit includes the second and third transistors, which are connected in series and enable a fast pull-down of the output during selection of a low input data. The select input circuit is coupled to the gate of the first transistor and the gate of the second transistor. The pull up circuit includes a P-type transistor, with its gate connected to the source of the first transistor. The output is coupled to the drain of the second transistor and is also operatively coupled to the drain of the P-type transistor. Operation of the P-type transistor allows selection of the output to occur with lower dissipation.
The above as well as additional objects, features, and advantages of the present invention will become apparent in the following detailed written description.


REFERENCES:
patent: 5698992 (1997-12-01), El Ayat et al.
patent: 6124736 (2000-09-01), Yamashita e

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