High-speed semiconductor integrated circuit device composed of C

Details High-speed semiconductor integrated circuit device composed of C High-speed semiconductor integrated circuit device composed of C

1995-06-07

1997-03-25

Hudspeth, David R.

Electronic digital logic circuitry

Function of and, or, nand, nor, or not

Bipolar and fet

326 18, H03K 1901

Patent

active

056148488

ABSTRACT:
The semiconductor IC device has a circuit arrangement in which one or more of the circuits, such as on a single substrate, include a totem-pole series connection of bipolar transistors which are driven by arrangements of complementary MOS circuits in a manner such that high-speed logic/switching operation is effected. Arrangements of circuits can also be effected in which the totem-pole series connection is constituted by a PNP transistor, on the power source terminal side, and an NPN or NMOS transistor on the ground or pull-down side thereof. With such configurations, the output signal swing at low operating voltages can be maximized while achieving the same with reduced propagation delay time and low power consumption. The device can also be implemented by circuitry employing capacitance bootstrapping effect as well as IIL (I.sup.2 L) design schemes.

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