High-speed semiconductor device

Static information storage and retrieval – Systems using particular element – Semiconductive

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

307DIG1, 357 42, 365226, G11C 700

Patent

active

042336724

ABSTRACT:
A CMOS semiconductor memory device in which a memory cell array and peripheral circuits are formed on the same semiconductor substrate. Wells of the peripheral circuits with MOS transistors of one channel type formed therein are supplied with a PN junction reverse bias potential higher than that for wells of the memory cell array during the memory operation, while the potential at the peripheral circuit wells is made equal to the potential at the wells of the memory cell array when the memory is not operating. High-speed operation of the memory device may be achieved because the junction capacitance of the MOS transistors formed in the peripheral circuit wells is reduced when the memory is operating.

REFERENCES:
patent: 3916430 (1975-10-01), Heuner et al.
Oliphant, Application Engineering, Designing Non-Volatile Memory Systems with Intels 5101 RAM, 1975.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High-speed semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-speed semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-speed semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1694966

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.