High-speed responding data storing device for maintaining stored

Details High-speed responding data storing device for maintaining stored High-speed responding data storing device for maintaining stored

1998-11-24

2000-05-30

Mai, Son

Static information storage and retrieval

Systems using particular element

Ferroelectric

365154, 36518507, 257295, 257903, G11C 1122, G11C 1100

Patent

active

060698160

ABSTRACT:
It is an object of the present invention to provide a data storing device capable of responding in high speed without providing a power supply just for maintaining the stored data. A memory cell MC11 is made so as to replace only a memory transistor MT1 out of a pair of memory transistors MT1 and MT2 used for the prior art SRAM with a transistor with "MFMIS structure" having a ferroelectric layer 32. The ferroelectric layer 32 keep storing a polarization state in response to ON state stored in the memory transistor MT1 even when a power supply of the device is turned off. The memory transistor MT1 is turned into ON state in accordance with the polarization state stored in the ferroelectric layer 32 when the power supply is turned on again. In response to the change in state at the memory transistor MT1, the memory transistor MT2 is turned into OFF state. That is, the memory cell MC11 is defined as a ferroelectric memory. In addition, the reversal of the polarity in the ferroelectric layer 32 is carried out in high-speed.

REFERENCES:
patent: 4809225 (1989-02-01), Dimmler et al.
patent: 5146299 (1992-09-01), Lampe et al.
patent: 5361224 (1994-11-01), Takasu
patent: 5390143 (1995-02-01), Manning
patent: 5535154 (1996-07-01), Kiyono
patent: 5886375 (1999-03-01), Sun

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