High-speed read-out semiconductor memory

Details High-speed read-out semiconductor memory High-speed read-out semiconductor memory

1996-08-30

1997-06-24

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Differential sensing

36518905, 365194, 365233, G11C 702

Patent

active

056423195

ABSTRACT:
In order to decrease peak value of current consumed by sense amplifiers provided in a high-speed read-out semiconductor memory for sensing and amplifying data of certain words of addresses having the same upper bits with upper bits of a read-out address when the upper bits are changed from those of its preceding read-out address, the sense amplifiers are divided into some groups. A group of sense amplifiers for sensing and amplifying data of words including a word indicated by the read-out address is activated firstly and other groups are controlled to be activated a little delayed according to logic of lower bits of the read-out address when the upper bits are changed. Therefore, the peak value of the current consumption Can be decreased without any operational delay.

REFERENCES:
patent: 5311483 (1994-05-01), Takasugi
patent: 5461585 (1995-10-01), Chonan
patent: 5566108 (1996-10-01), Kitamura

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