Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-03-08
1996-07-30
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257370, 257374, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
055414338
ABSTRACT:
Spacers are formed on the inside walls of a narrow silicon loss trench of a poly-emitter type bipolar transistor structure so that at most a narrow strip on the bottom of the trench receives high concentration doping when an extrinsic base region of the bipolar transistor is being doped. The narrowness of the exposed silicon surface which is etched to form the silicon loss trench slows vertical etching and thereby facilitates the formation of a shallow trench. The narrowness of the strip on the bottom of the trench which receives high concentration doping causes slow vertical diffusion of dopants. As a result, the highly doped link region which extends downward from the bottom of the trench does not extend downward much farther than the base region. A high cutoff frequency is therefore achievable by reducing the distance between the bottom of the base region and the top of the buried layer without decreasing the base-to-collector breakdown voltage.
REFERENCES:
patent: 4486942 (1984-12-01), Hirao
patent: 5008210 (1991-04-01), Chiang et al.
patent: 5416351 (1995-05-01), Ito et al.
patent: 5448087 (1995-09-01), Streit et al.
Integrated Device Technology Inc.
Meier Stephen D.
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