Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-01-09
2007-01-09
Everhart, Caridad (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257SE31054, C257SE21040, C257SE21057
Reexamination Certificate
active
11329185
ABSTRACT:
A structure (and method for forming the structure) includes a photodetector, a substrate formed under the photodetector, and a barrier layer formed over the substrate. The buried barrier layer preferably includes a single or dual p-n junction, or a bubble layer for blocking or eliminating the slow photon-generated carriers in the region where the drift field is low.
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Cohen Guy Moshe
Ouyang Qiqing C.
Schaub Jeremy Daniel
Dougherty, Esq. Anne V.
Everhart Caridad
International Business Machines - Corporation
McGinn IP Law Group PLLC
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