High-speed nonvolatile memory array

Details High-speed nonvolatile memory array High-speed nonvolatile memory array

1982-02-01

1985-06-18

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Data refresh

365202, 365210, G11C 1140

Patent

active

045244316

ABSTRACT:
A memory array using nonvolatile memory elements. Preferably multi-dielectric transistors are used to provide nonvolatile information storage. Good write speed is attained by providing a relatively low barrier to carrier injection. To compensate for the resulting low storage time, periodic refresh logic is provided, so that all cells in the array are refreshed at a given clock period, e.g. one second. To compensate for the changing characteristics of the nonvolatile transistors during their storage lifetime, a reference voltage generator is provided which consists of two nonvolatile memory cells programmed in opposite states, together with a resistive network for averaging their output.

REFERENCES:
patent: 4433395 (1984-02-01), Iyehara et al.

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