Static information storage and retrieval – Read/write circuit – Noise suppression
Patent
1997-12-12
1999-09-07
Nguyen, Tan T.
Static information storage and retrieval
Read/write circuit
Noise suppression
36518906, 365210, G11C 700
Patent
active
059497289
ABSTRACT:
A single ended sensing scheme amplifies the logic state stored within a non-volatile memory circuit by relying upon three stages, a clamping circuit, a first operational amplifier and a second operational amplifier. The clamping circuit clamps the voltage at a voltage level with a small voltage swing between the logic states. The first stage and second stage operational amplifiers increase the clamped voltage level. A reference memory circuit ensures that the sensing scheme output is properly adjusted to compensate for voltage and temperature variations as well as noise injection from the power supply and ground.
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Cheng Chuck Cheuk-wing
Liu Kwo-Jen
Nguyen Tan T.
Scenix Semiconductor Inc.
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