High-speed memory with a limiter of the drain voltage of the cel

Details High-speed memory with a limiter of the drain voltage of the cel High-speed memory with a limiter of the drain voltage of the cel

1991-03-01

1994-04-12

Wambach, Margaret R.

Static information storage and retrieval

Read/write circuit

Including signal clamping

36518907, 36518909, 365185, G11C 1134

Patent

active

053031890

ABSTRACT:
An erasable and electrically programmable memory with only few cells works at high speed in reading mode and is reliable. This is achieved by using a voltage limiter that limits the variation in the drain voltage of the memory cells.

REFERENCES:
patent: 3765002 (1973-10-01), Basse
patent: 4694429 (1987-09-01), Tanaka et al.
patent: 4843594 (1989-06-01), Tanaka et al.
patent: 4860256 (1989-08-01), Devin et al.
patent: 4947375 (1990-08-01), Gaultier et al.
patent: 5027320 (1991-06-01), Pathak et al.

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