High speed magneto-resistive random access memory

Details High speed magneto-resistive random access memory High speed magneto-resistive random access memory

1990-06-28

1992-12-22

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365158, G11C 1115

Patent

active

051738732

ABSTRACT:
A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic films surrounding a magento-resistive film which may be ferromagnetic or not. One outer ferromagnetic film has a higher coercive force than the other and therefore remains magnetized in one sense while the other may be switched in sense by a switching magnetic field. The magneto-resistive film is therefore sensitive to the amplitude of the resultant field between the outer ferromagnetic films and may be constructed of a high resistivity, high magneto-resistive material capable of higher sensing currents. This permits higher read voltages and therefore faster read operations. Alternate embodiments with perpendicular anisotropy, and in-plane anisotropy are shown, including an embodiment which uses high permeability guides to direct the closing flux path through the magneto-resistive material. High density, high speed, radiation hard, memory matrices may be constructed from these memory elements.

REFERENCES:
patent: 4754431 (1988-06-01), Jenson
patent: 4857418 (1989-08-01), Schuetz
A. V. Pohm et al., "The Design of a One Megabit Non-Volatile M-R Memory Chip Using 1.5.times.5 .mu.m Cells", 1988, Trans. on Magnetics, vol. 24, No. 6, Nov. 1988, pp. 3117-9.

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