High speed, low power consumption voltage switching circuit for

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307455, 307456, 307466, 307467, 307546, 3072963, 36518908, 365227, G06F 738, H03K 19086

Patent

active

051285584

ABSTRACT:
A memory device (10) includes switching circuitry 22 comprising sensing and control circuits (24 and 26) to predict the next state of the output of memory device (12) and to turn on and off current sources (20) responsive to said memory output to provide faster output transitions.

REFERENCES:
patent: 4422162 (1983-12-01), Davis et al.
patent: 4645953 (1987-02-01), Wong
patent: 4801820 (1989-01-01), Nootbaar
patent: 4839539 (1989-06-01), Takata et al.
patent: 4906862 (1990-03-01), Itano et al.
patent: 4999519 (1991-03-01), Kitsukawa et al.

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