Electronic digital logic circuitry – Clocking or synchronizing of logic stages or gates – Field-effect transistor
Reexamination Certificate
2007-10-23
2007-10-23
Chang, Daniel (Department: 2819)
Electronic digital logic circuitry
Clocking or synchronizing of logic stages or gates
Field-effect transistor
C326S098000, C365S203000
Reexamination Certificate
active
11207806
ABSTRACT:
A logic gate with a differential evaluation stage, precharge circuitry for precharging outputs of the gate, latch circuitry for latching the outputs and an inverter. The gate uses high speed, low threshold voltage devices in the evaluation stage, yet uses higher threshold voltage devices in other portions of the gate (e.g., precharge circuitry). This use of dual threshold voltage devices minimizes power consumption while maximizing speed. During standby mode, the gate is operated in an evaluation mode to substantially mitigate standby current.
REFERENCES:
patent: 4041326 (1977-08-01), Robinson
patent: 4160919 (1979-07-01), Curtice
patent: 4207476 (1980-06-01), Upadhyayula
patent: 4484091 (1984-11-01), Nagano
patent: 4626711 (1986-12-01), Li
patent: 4713790 (1987-12-01), Kloker et al.
patent: 4718035 (1988-01-01), Hara et al.
patent: 4870305 (1989-09-01), Rocchi
patent: 5117133 (1992-05-01), Luebs
patent: 5334888 (1994-08-01), Bodas
patent: 5523707 (1996-06-01), Levy et al.
patent: 5576637 (1996-11-01), Akaogi et al.
patent: 5736868 (1998-04-01), Kim et al.
patent: 6081130 (2000-06-01), Cao et al.
patent: 6137309 (2000-10-01), Couteaux et al.
patent: 6335639 (2002-01-01), Aingaran
patent: 6356112 (2002-03-01), Tran et al.
patent: 6437602 (2002-08-01), Friend et al.
patent: 6469541 (2002-10-01), Tran et al.
patent: 6727728 (2004-04-01), Bitting
patent: 60233932 (1985-11-01), None
Dongwoo Lee, David Blaauw,Static Leakage Reduction Through Simultaneous Threshold Voltage and State Assignment, pp. 191-194, Jun. 2-6, 2003.
Yibin Ye, Shekhar Borkar and Vivek De,A New Technique for Standby Leakage Reduction in High-Performance Circuits, 1998 Symposium on VLSI Circuits Digest of Technical Papers, pp. 40-41, Aug. 1998.
Tanay Karnik, Yibin Ye, James Tschanz, Liqiong Wei, Steven Burns, Venkatesh Govindarajulu, Vivek De, and Shekhar Borkar,Total Power Optimization by Simultaneous Dual-Vt Allocation and Device Sizing in High Performance Microprocessors, pp. 486-491, Jun. 10-14, 2002.
Chulwoo Kim, Ki-Wook Kim, and Sung-Mo Kang,Energy-Efficient Skewed Static Logic With Dual Vt: Design and Synthesis, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 11, No. 1 Feb. 2003, pp. 64-70.
Jyh-Ming Wang, Sung-Chuan Fang, and Wu-Shiung Feng,New Efficient Designs for XOR and XNOR Functions on the Transistor Level, IEEE Journal of Sold-State Circuts, vol. 29, No. 7, Jul. 1994, pp. 780-786.
Gans Dean D.
Lovett Simon J.
Weber Larren G.
Chang Daniel
Dickstein & Shapiro LLP
Micro)n Technology, Inc.
LandOfFree
High speed, low power CMOS logic gate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High speed, low power CMOS logic gate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High speed, low power CMOS logic gate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3848349