High speed, low power clocking sense amplifier

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

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Details

365203, 365202, 365196, 365204, G11C 706

Patent

active

055507778

ABSTRACT:
A memory element for a static random access memory which comprises a bit line and a bit line for providing a voltage on one of the lines indicative of a binary "1" or a "0" and the other of a "1" or a "0" on the other line. A sense amplifier is coupled to the bit and bit lines, the sense amplifier including a first switch coupled to the bit line and a second switch coupled to the bit line. The element also includes circuitry associated with the bit line and responsive to a select signal to indicate the voltage level of the bit line and to indicate the voltage level of the bit line. The first and second switches are responsive to the circuitry to turn off one of said first and second switches and turn on the other of said first and second switches when the difference in voltage level on the bit and bit lines is in one direction and to turn off and on the other of the switches when the difference in voltage level on the bit and bit lines is in the opposite direction. The circuitry comprises a first series circuit coupled between the bit line and a source of reference voltage comprising a the first switch having a first control element, a second switch having a third control element and a fourth switch having a fourth control element and a second series circuit coupled between the bit line and the source of reference voltage comprising the second switch having a second control element, a fifth switch having a fifth control element and a sixth switch having a sixth control element.

REFERENCES:
patent: 4991141 (1991-02-01), Tran
patent: 5029136 (1991-07-01), Tran et al.
patent: 5289430 (1994-02-01), Tran
patent: 5294847 (1994-03-01), Grossman et al.
patent: 5418737 (1995-05-01), Tran

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