High speed low power bitline

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000, C716S030000, C716S030000, C326S033000, C326S041000, C326S047000, C326S101000, C327S051000, C327S309000, C327S321000, C365S185130, C711S102000, C711S104000, C711S118000

Reexamination Certificate

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06880144

ABSTRACT:
A circuit for controlling a bitline during a memory access operation is provided. The circuit includes a plurality of sub-arrays with each sub-array having a plurality of memory cells. Each of the memory cells is coupled to respective bitline columns. The circuit further includes a sensed output from one of the bitline columns, and a global bitline coupled to a same respective bitline column of each of the plurality of sub-arrays. Each global bitline includes a voltage swing limiter for limiting a voltage swing of the global bitline, and an n-type transistor. The n-type transistor has a gate, a first terminal, and a second terminal. The gate is coupled to the sensed output, the first terminal is coupled to the global bitline, and the second terminal is coupled to the voltage swing limiter.

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