High speed low power annular magnetic devices based on...

Details High speed low power annular magnetic devices based on... High speed low power annular magnetic devices based on...

2007-12-11

2007-12-11

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S173000, C365S225700, C365S097000, C365S066000

Reexamination Certificate

active

11498303

ABSTRACT:
A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer, and the reference layer includes an easy axis perpendicular to the reference layer. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device.

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