High-speed, low-current magnetoresistive memory device

Details High-speed, low-current magnetoresistive memory device High-speed, low-current magnetoresistive memory device

1997-11-26

1998-10-20

Hoang, Huan

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365168, 365173, G11C 1100, G11C 1156

Patent

active

058256857

ABSTRACT:
A memory cell has two magnetoresistive memory elements, each with at least two ferromagnetic layers. The electrical resistance of each memory element differs depending on whether the ferromagnetic layers are magnetized in the parallel or antiparallel state. Binary information is stored in the memory cell by supplying currents that generate magnetic fields setting one memory element to the parallel state and the other memory element to the antiparallel state. Alternatively, ternary information is stored, two of the ternary values being stored in the same way as the binary values, and the third ternary value being stored by setting both memory elements to the same state. The stored values are read by comparing the resistances of the two memory elements.

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Yousuke Irie et al, Japan Journal of Physics, vol. 34 (1995), pp. 415-417.
"Magnetoresistive Memory Technology", J.M. Daughton, Thin Solid Films 216 (1992), pp. 162-168, Elsevier Sequoia.

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