High speed low capacitance charge coupled device in silicon-sapp

Details High speed low capacitance charge coupled device in silicon-sapp High speed low capacitance charge coupled device in silicon-sapp

1976-01-20

1977-09-06

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307221D, 357 4, 357 49, 357 89, H01L 2978, G11C 1928, H01L 2712

Patent

active

040472167

ABSTRACT:
A charge coupled device (CCD) built in a semiconductor island on sapphire substrate has very low gate capacitances and consequently will operate at very high speeds.

REFERENCES:
patent: 3660697 (1972-05-01), Berglund et al.
patent: 3704376 (1972-11-01), Lehovec et al.
patent: 3784847 (1974-01-01), Kurz et al.
patent: 3796927 (1974-03-01), Boyle et al.
Chan "Fabrication and Operation of CCD Structure with Silicon Grown on Sapphire Substrates" IEEE Int. Electron Devices Meeting Tech. Dig., (12/73) pp. 469-472.
Tompsett et al. "Charge Coupled 8-Bit Shift Register" Applied Physics Letters, vol. 17 (8/70) pp. 111-115.
Appels et al. "Local Oxidation of Silicon and its Application . . ." Philips Res. Repts., vol. 25 (4/70) pp. 118-132.

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