High speed gate oxide protected level shifter

Electronic digital logic circuitry – Interface – Supply voltage level shifting

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Details

326 17, 326 68, H03K 190185, H03K 19017

Patent

active

059695420

ABSTRACT:
An improved gate oxide protected level shifter is provided which has a higher speed of operation than is traditionally available. The level shifter includes a first capacitor coupled between a first output terminal and the input of an inverter and a second capacitor coupled between a first node and the output of the inverter. As a result, the speed of the transitions at the gates of the pair of cross-coupled P-channel MOS transistors is increased several times.

REFERENCES:
patent: 4305009 (1981-12-01), Miyagawa et al.
patent: 5243236 (1993-09-01), McDaniel
patent: 5391939 (1995-02-01), Nonaka
patent: 5539334 (1996-07-01), Clapp, III et al.

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