High speed GaAs MESFET having refractory contacts and a self-ali

Details High speed GaAs MESFET having refractory contacts and a self-ali High speed GaAs MESFET having refractory contacts and a self-ali

1987-04-20

1989-02-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437912, 437175, 437176, 437184, 437192, 357 15, 357 22, 148DIG20, H01L 2131

Patent

active

048085456

ABSTRACT:
Disclosed is a process fo fabrication of a MESFET in which starting with a GaAs substrate having a shallow N- layer covered with nitride, a submicron-wide dummy gate mask consisting of upper and lower portions made of dissimilar materials is formed. Multilayer organic and sidewall image transfer techniques are employed for forming the mask. The nitride is etched using the gate mask. N+ source/drain are formed by ion implantation. The lower portion of the gate mask is etched to expose the periphery of the nitride. Refractory metal for source/drain contacts is deposited. An oxide laeyr is deposited to passivate the source/drain contacts and to fully cover the exposed nitride periphery. The gate mask is removed. High temperature anneal is accomplished to simultaneously activate the N+ regions and anneal the contact metal. By RIE the exposed nitride removed leaving submicron spacers thereof. Gate metal is deposited in the gate region. Excess gate metal is removed to obtain a gate which has a planar top and has little lapping over the source/drain contacts.

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