High speed first-in-first-out memory

Static information storage and retrieval – Read/write circuit – Serial read/write

Patent

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Details

365219, 365239, 365 72, 364900, G11C 1300

Patent

active

046427970

ABSTRACT:
A high speed M-stack fall-through FIFO memory system is disclosed which reduces fall-through delay and which permits at least a doubling of the maximum shift rates at input and output ports. Input port data may be entered in one of M physical memory locations and output port data may be read from one of M physical memory locations.

REFERENCES:
patent: 3976842 (1976-08-01), Hoyt
patent: 4151609 (1979-04-01), Moss
patent: 4152781 (1979-05-01), Aichelmann, Jr.
patent: 4374428 (1983-02-01), Barnes

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