High-speed DRAM sense amp with high noise immunity

Details High-speed DRAM sense amp with high noise immunity High-speed DRAM sense amp with high noise immunity

1989-10-16

1991-07-02

Moffitt, James W.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365202, 307530, G11C 706

Patent

active

050291360

ABSTRACT:
A sense amplifier (10) has P channel transistors (38,48) connected between first and second nodes (34,44) of the sense amplifier and respective bitlines (12,14). The gates (42,52) of the P channel transistors (38,48) are connected to ground. As the voltage at one of the nodes (34 or 44) approaches ground voltage during the sensing operation, the bitline (12 or 14) is effectively disconnected from the sense amplifier (10) thereby increasing sensing speed while reducing noise between the bitline and the node.

REFERENCES:
patent: 4716320 (1987-12-01), McAdams
patent: 4816706 (1989-03-01), Dhong et al.
IBM Techanical Disclosure Bulletin-vol. 25, No. 10, Mar. 1983, pp. 5088-5091.

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