High-speed diamond growth using a microwave plasma in pulsed...

Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C427S906000, C427S573000, C427S577000

Reexamination Certificate

active

07662441

ABSTRACT:
Disclosed is a method for manufacturing a diamond film of electronic quality at a high rate using a pulsed microwave plasma. The plasma that has a finite volume is formed near a substrate (in a vacuum chamber) by subjecting a gas containing at least hydrogen and carbon to a pulsed discharge. The pulsed discharge has a succession of low-power states and of high-power states and a peak absorbed power PC, in order to obtain carbon-containing radicals in the plasma. These carbon-containing radicals are deposited on the substrate in order to form a diamond film. Power is injected into the volume of the plasma with a peak power density of at least 100 W/cm3, while maintaining the substrate to a substrate temperature of between 700° C. and 1000 ° C.

REFERENCES:
patent: 4985227 (1991-01-01), Ito et al.
patent: 5240749 (1993-08-01), Chow
patent: 5260106 (1993-11-01), Kawarada et al.
patent: 5518759 (1996-05-01), Sevillano et al.
patent: 5560779 (1996-10-01), Knowles et al.
patent: 5626922 (1997-05-01), Miyanaga et al.
patent: 5643365 (1997-07-01), Blinov et al.
patent: 5993919 (1999-11-01), Tsuno et al.
patent: 6110542 (2000-08-01), Miyanaga et al.
patent: 6200183 (2001-03-01), Badzian et al.
patent: 6261424 (2001-07-01), Goncharenko et al.
patent: 0 582 397 (1993-07-01), None
patent: 0 635 584 (1994-07-01), None
patent: 01157496 (1989-06-01), None
patent: WO 01/96633 (2001-06-01), None
patent: WO 01/96634 (2001-06-01), None
Vikharev et al., Comparison of pulsed and CW regimes of MPACVD reactor operation, Diamond and Related Materials 12 (2003) 272-276. Published online at www.sciencedirect.com Apr. 8, 2003.
Gicquel, et al.,Journal of Applied Physics, Jun. 15, 1998, vol. 83, No. 12, pp. 7504-7521.
Gicquel, et al.,Materials Research, 2003, vol. 6, No. 1 pp. 25-37.
Gordon, et al.,Journal of Applied Physics, Feb. 1, 2001, vol. 89, No. 3, pp. 1544-1549.
Hassouni, et al.,Plasma Sources Science and Technology, 2001, vol. 10, pp. 61-75.
Lombardi, et al.,Journal of the Electrochemical Society, 2003, vol. 150, No. 5, pp. C311-C319.
Lombardi, et al., “Diagnostics and Modeling of Moderate Pressure Microwave H2/CH4Plasmas Obtained Under Pulsed Mode” paper, 2001.
Silva, et al.,Diamond and Related Materials, 1996, vol. 5, pp. 338-344.
Lombardi, et al., “Diagnostics and modeling of moderate pressure microwave H2/C4plasmas obtained under pulsed mode”, ISPC, Orléans, Jul. 2001.
Lombardi, et al., “Diagnostics and modeling of moderate pressure microwave H2/C4plasmas obtained under pulsed mode”, Proceedings ECS, San Francisco, Sep. 2001.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High-speed diamond growth using a microwave plasma in pulsed... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-speed diamond growth using a microwave plasma in pulsed..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-speed diamond growth using a microwave plasma in pulsed... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4171770

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.