Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-08-01
2006-08-01
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S019000
Reexamination Certificate
active
07084431
ABSTRACT:
A layered structure for forming electronic devices thereon is provided. The layered structure includes an over-shoot layer, Si1−yGey, within a relaxed Si1−xGexlayer, wherein y=X+Z and Z is in the range from 0.01 to 0.1 and X is from 0.35 to 0.5. The over-shoot layer has a thickness that is less than its critical thickness.
REFERENCES:
patent: 5534713 (1996-07-01), Ismail et al.
Chu Jack Oon
Hammond Richard
Ismail Khalid EzzEldin
Koester Steven John
Mooney Patricia May
Rose Kiesha
Scully , Scott, Murphy & Presser, P.C.
Smith Zandra V.
Trepp, Esq. Robert M.
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