High speed CMOS photodetectors with wide range operating region

Details High speed CMOS photodetectors with wide range operating region High speed CMOS photodetectors with wide range operating region

1998-12-15

2000-03-28

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257461, 250215, 327514, 327515, H01L 31113

Patent

active

060435259

ABSTRACT:
A CMOS charge-integration mode photo-detector built on an n-type substrate is disclosed in this invention. This photo-detector includes a p+n photodiode with the n-type substrate constituting an n-region and a p+ diffusion region disposed near a top surface of the n-type substrate, the p+ diffusion region constituting a charge integration node. The photodetector further includes a gate-biased charge storable n-type MOS transistor functioning as a photo-conversion voltage amplifier supported on the substrate formed with a threshold voltage of Vt0 having a gate terminal connected to the charge-integration node. The photodetector further includes a MOS transistor supported on the substrate functioning as a constant current-source load transistor having a drain terminal connected to a source terminal of the gate-biased charge storable n-type MOS transistor and a gate terminal connected to a bias reference voltage. The photodetector further includes a pre-charge switch transistor supported on the substrate having a source terminal connected to charge-integration node and a drain terminal connected to a bias voltage source. In an alternate preferred embodiment, the photo-detector is formed in a p-type substrate.

REFERENCES:
patent: 5581077 (1996-12-01), Chirovsky et al.
patent: 5721425 (1998-02-01), Merrill
patent: 5742047 (1998-04-01), Buhler et al.
patent: 5869857 (1999-02-01), Chen

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