High-speed cell-sensing unit for a semiconductor memory device

Details High-speed cell-sensing unit for a semiconductor memory device High-speed cell-sensing unit for a semiconductor memory device

1999-06-04

1999-12-28

Tran, Andrew Q.

Static information storage and retrieval

Read/write circuit

Differential sensing

365207, 365190, 365196, 36518909, 36518906, 327 52, 327 53, 327 54, G11C 706

Patent

active

060090324

ABSTRACT:
A cell-sensing unit is applied to a memory device having a cell associated operably with a complementary pair of bit lines and a word line. The cell-sensing unit includes a current sense amplifier having a first input side adapted to be connected to the bit lines, and a first output side, and a voltage amplifier having a second input side connected to the first output side of the current sense amplifier, and a second output side. The current sense amplifier is capable of magnifying a difference between currents flowing through the bit lines during a read cycle of the cell, and generates a corresponding voltage difference at the first output side. The voltage difference is received by the voltage amplifier at the second input side, and has a magnitude sufficient to enable the voltage amplifier to generate an output signal at the second output side corresponding to data stored in the cell.

REFERENCES:
patent: 5828614 (1998-10-01), Gradinariu

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