Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-09-04
2000-12-19
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438614, 438615, H01L 2144
Patent
active
061627186
ABSTRACT:
A plurality of uniform bumps are formed on a semiconductor device by forming a plurality of bond limiting metallization areas. The surface of the semiconductor device is then plated with a plating metal that will be alloyed with the solder of the solder bump, said solder and the plating material forming an alloy during the reflowing step. A mask is then placed onto the surface of the semiconductor device. Openings are made in the mask that correspond to the plurality of bond limiting metallization areas on the surface of the semiconductor device. The plurality of bond limiting metallization areas are also the electrical contact pads. Solder is then deposited through the openings in the mask at a rate of solder deposition which provides a uniform thickness of solder across the surface of the wafer which is later diced into many chips. The openings formed in the mask have substantially a bigger footprint or area associated with each pad. Since the solder balls are at the same height, the solder balls have approximately the same volume. Next, the mask and plating layer beneath the mask are removed leaving a substantially uniform volume of solder and plating material positioned on and near the plurality of bond limiting metallization areas. The next step is to reflow the solder to form substantially uniform solder balls or bumps on each pad across the wafer by consuming the plating metal. The plating material beneath the solder alloys with the solder during this step. In addition, the solder and plating material gathers on each bond limiting metallization area to form bumps which are uniform in height and volume.
REFERENCES:
patent: 5854513 (1998-12-01), Kim
patent: 5937320 (1999-08-01), Andricacos et al.
patent: 5989993 (1999-11-01), Zakel et al.
patent: 6008543 (1999-12-01), Iwabuchi
patent: 6030890 (2000-02-01), Iwabuchi
Advanced Micro Devices
Bowers Charles
Pert Evan
LandOfFree
High speed bump plating/forming does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High speed bump plating/forming, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High speed bump plating/forming will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-270840