High speed ashing method

Details High speed ashing method High speed ashing method

1996-04-22

1997-12-16

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 12, 1566551, 1566561, 216 69, 216 77, 252 791, H01L 2100

Patent

active

056980710

ABSTRACT:
A wafer (11) is conveyed in a vacuum from an Al etching chamber after the Al etching and is fed into an ashing chamber (15) without coming into contact with the atmosphere. After the wafer (11) was conveyed, CH.sub.3 OH gas of 200 sccm is first introduced by a valve (30a) and a pressure is adjusted to 1.2 Torr. Subsequently, a microwave current of 450 mA is supplied, thereby forming a plasma. The wafer (11) is processed by a down-flow system of a CH.sub.3 OH plasma. The supply of the CH.sub.3 OH gas is stopped by closing the valve (30a). Next, oxygen gas of 400 sccm is introduced by opening a valve (30b). A microwave current of 450 mA is supplied at a pressure of 1.2 Torr, thereby forming a plasma. A resist on the wafer 11 is ashed and eliminated by a down-flow process of an oxygen plasma. By those processes, the corrosion prevention and the resist ashing can be perfectly executed.

REFERENCES:
patent: 5200031 (1993-04-01), Latchford et al.
patent: 5221424 (1993-06-01), Rhoades
patent: 5227341 (1993-07-01), Kamide
patent: 5380397 (1995-01-01), Fukuyama et al.
patent: 5545289 (1996-08-01), Chen et al.

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