High-speed and high-density semiconductor memory

Details High-speed and high-density semiconductor memory High-speed and high-density semiconductor memory

1987-08-17

1991-02-19

Larkins, William D.

Static information storage and retrieval

Systems using particular element

Capacitors

357 22, 357 235, 357 236, G11C 1140, A01L 2704

Patent

active

049949993

ABSTRACT:
A multiplicity of field effect type semiconductor memory elements are formed perpendicular to a surface of a semiconductor wafer. Charge carriers are transported in the semiconductor bulk perpendicular to the surface and a potential barrier is formed in the current path to accomplish storing. Since the bulk mobility of a semiconductor is far larger than the surface mobility, the transit time of the carriers is much improved. Furthermore, since each structure of the memory cells is formed perpendicular to the semiconductor surface, the surface occupation area per memory cell is reduced. Thus, a high-speed and high-density semiconductor memory device is provided.

REFERENCES:
patent: 3676715 (1972-07-01), Brojdo
patent: 3876992 (1975-04-01), Pricer
patent: 3893155 (1975-07-01), Ogiue
patent: 3982264 (1976-09-01), Ishitani
patent: 3986180 (1976-10-01), Cade
patent: 4014036 (1977-03-01), Ho et al.
patent: 4064492 (1977-12-01), Schuermeyer et al.
patent: 4105475 (1978-08-01), Jenne
patent: 4115914 (1978-09-01), Harari
patent: 4135289 (1979-01-01), Brews
patent: 4471368 (1984-09-01), Mohsen
Lewis et al., IBM Tech. Discl. Bulletin, vol. 15, No. 9, Feb. 1973, p. 2822.
Dockerty, IBM Tech. Discl. Bulletin, vol. 19, No. 2, Jul. 1976, p. 510.
Abbas, IBM Tech. Discl. Bulletin, vol. 18, No. 10, Mar. 1976, p. 3300.
Clarke et al., IBM Tech. Discl. Bulletin, vol. 17, No. 9, Feb. 1975, pp. 2578-2579.
Nishizawa et al., Proc. 8th Conf. (1976) on Solid State Devices, Tokyo, 1976, reprinted in Japan. J. Applied Physics, vol. 16, suppl. 16-1, pp. 151-154 (1977).
Electronics, International Edition, Aug. 19, 1976, pp. 4E, 6E.

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