High sensitivity improved photoelectric imaging device with a hi

Details High sensitivity improved photoelectric imaging device with a hi High sensitivity improved photoelectric imaging device with a hi

1993-06-28

1995-04-18

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257443, 257448, 257461, 250206, 2502081, 250215, H01L 2714, H01L 3100

Patent

active

054081130

ABSTRACT:
A photoelectric transfer device includes at least one photoelectric transfer cell having the following elements: A photoelectric transfer element generates a photoelectric current based on a quantity of incident light. An amplifier element includes first FET and functions as a source follower in which a source voltage of the first FET is varied so as to follow up a gate voltage thereof. A read unit outputs, as an output signal, the source voltage of the source follower. The photoelectric transfer element is connected to a gate and source of the amplifier element so that a voltage between the gate and source of the amplifier element is applied across the photoelectric transfer element.

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