Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-07
2010-12-14
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S294000, C257SE27112, C257SE27133, C438S057000, C438S069000, C438S088000, C438S098000, C438S514000
Reexamination Certificate
active
07851839
ABSTRACT:
A method of fabricating a high-sensitivity image sensor and the same are disclosed. The disclosed method comprises: etching predetermined regions of active silicon and a buried oxide layer of a SOI substrate by using a mask to expose an N-type silicon substrate; implanting P-type ions into the exposed N-type silicon substrate to form P-type regions; forming a gate oxide layer and a gate electrode on the middle part of the active silicon not etched while the active silicon is etched to expose the N-type silicon substrate; forming a P-type gate electrode, and P-type source and drain regions by implanting P-type ions into the active silicon and the gate electrode above the buried oxide layer; and constructing a connection part to connect the P-type regions to the gate electrode. The disclosed high-sensitivity sensor comprises: a photodiode region having a PN junction between an N-type silicon substrate and a P-type region thereon; a monocrystalline silicon region from a SOI substrate in which source and drain regions, and a channel are placed, having a distance to the photodiode region; a gate oxide layer and a gate electrode on the silicon region; and a connection part connecting the P-type region of the photodiode to the gate electrode.
REFERENCES:
patent: 5016108 (1991-05-01), Akimoto et al.
patent: 5360987 (1994-11-01), Shibib
patent: 5747860 (1998-05-01), Sugiyama et al.
patent: 5811866 (1998-09-01), Hirata
patent: 5901257 (1999-05-01), Chen et al.
patent: 6020581 (2000-02-01), Dennard et al.
patent: 6127697 (2000-10-01), Guidash
patent: 6228750 (2001-05-01), Shibib
patent: 6229165 (2001-05-01), Sakai et al.
patent: 6380037 (2002-04-01), Osanai
patent: 6380572 (2002-04-01), Pain et al.
patent: 6465846 (2002-10-01), Osanai
patent: 6700144 (2004-03-01), Shimazaki et al.
patent: 6838301 (2005-01-01), Zheng et al.
patent: 7061031 (2006-06-01), Kim
patent: 7075165 (2006-07-01), Leon et al.
patent: 7160753 (2007-01-01), Williams, Jr.
patent: 7233036 (2007-06-01), Hsu et al.
patent: 2005/0205930 (2005-09-01), Williams
Korean Search Report on Korean Patent Application No. 10-2003-0087286,dated Aug. 16, 2005 and Patent Granted Decision Aug. 22, 2005.
Korean Search Report on Korean Patent Application No. 10-2003-0087324,dated Aug. 16, 2005 and Patent Granted Decision Aug. 22, 2005.
Greenblum & Bernstein P.L.C.
Ho Hoang-Quan T
Korea Electronics Technology Institute
Loke Steven
LandOfFree
High-sensitivity image sensor and fabrication method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-sensitivity image sensor and fabrication method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-sensitivity image sensor and fabrication method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4176505