High selectivity nitride to oxide etch process

Details High selectivity nitride to oxide etch process High selectivity nitride to oxide etch process

1996-03-07

1998-05-19

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566571, H01L 21306

Patent

active

057530734

ABSTRACT:
The process parameters according to which the AMT 8310 RIE plasma etcher operates are altered so as to increase the nitride to oxide selectivity of the AMT 8310 RIE plasma etcher from approximately 3:1 to approximately 5:1, thereby allowing for the fabrication of modern semiconductor devices having oxide films significantly less thick than 325 .ANG.. In this manner, the present invention eliminates the need for an expensive upgrade in etching equipment to realize an increase in nitride to oxide selectivity.

REFERENCES:
patent: 4484979 (1984-11-01), Stocker

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