High selectivity collar oxide etch processes

Details High selectivity collar oxide etch processes High selectivity collar oxide etch processes

1998-01-28

2000-05-23

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

706712, 706723, 706724, H01L 2100, H01L 213065

Patent

active

060665661

ABSTRACT:
A collar oxide is formed in a provided a semiconductor substrate having (3) a partially full trench, (2) (i) fill surface defined by fill material partially filling said trench, (ii) upper surface outside of said trench, and (iii) trench sidewall surface not covered by said fill material, and (3) a conformal oxide layer overlying said fill, upper, and sidewall surfaces, by selectively etching as follows:

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