High selectivity BPSG:TiSi.sub.2 contact etch process

Details High selectivity BPSG:TiSi.sub.2 contact etch process High selectivity BPSG:TiSi.sub.2 contact etch process

1996-06-26

1999-06-01

McCamish, Marion

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438738, 438723, H01L 213065

Patent

active

059083204

ABSTRACT:
A method for etching through a selected portion of a Borophosphosilicate Glass (BPSG) layer of the silicon wafer layer stack to a Titanium Silicide (TiSi.sub.2) layer in a plasma processing chamber is disclosed. The method includes the step of etching through the BPSG layer using an etchant source gas that includes Ne, CHF.sub.3, CO and C.sub.4 F.sub.8. Additional process parameters are disclosed for obtaining a high BPSG:TiSi.sub.2 selectivity etch with commercially advantageous BPSG etch rates.

REFERENCES:
patent: 5556501 (1996-09-01), Collins et al.
patent: 5589413 (1996-12-01), Sung et al.
patent: 5611888 (1997-03-01), Bosch et al.
patent: 5626716 (1997-05-01), Bosch et al.
Computer printout of REGISTRY database search of "SUVA.", Jul. 1997.
Computer printout of USPATFULL database search of "SUVA.", Jul. 1997.

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